Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-03-01
1995-09-05
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257458, 257459, 257464, 257466, H01L 2714, H01L 3100
Patent
active
054480990
ABSTRACT:
In a optoelectronic integrated circuit, a pin-type light receiving device and an electronic circuit device are electrically connected to each other and monolithically integrated on a semiconductor substrate. In the pin-type light receiving device, an n-type semiconductor layer, an i-type semiconductor layer, and a p-type semiconductor layer are sequentially formed on the semiconductor substrate and sequentially formed into mesa shapes. The first mesa is constituted by the p-type semiconductor layer, and the second mesa is constituted by the i-type semiconductor layer. The boundary surface between the first and second mesas is formed to match the junction surface between the p-type semiconductor layer and the i-type semiconductor layer. The diameter of the first mesa is formed smaller than that of the second mesa. With this structure, a depletion layer extending from the p-type semiconductor layer upon application of a reverse bias voltage stays within the i-type semiconductor layer and does not reach the surfaces of the first and second mesas to be exposed. For this reason, a dark current flowing in accordance with the interface state between the side surface of the mesa and an insulating layer for protecting the surface of the mesa is reduced. Therefore, a noise signal input in the electronic circuit device is reduced to improve the receiving sensitivity.
REFERENCES:
patent: 4885622 (1989-12-01), Uchiyama et al.
patent: 5051372 (1991-09-01), Sasaki
"1.3 .mu.m Wavelength Optical Receiver Front-End OEIC," Inst. Phys. Conf. Ser. No. 96: Chapter 8, by Dawe et al., presented at the Int. Symp. GaAs and Related Compounds, Atlanta, Ga, 1988.
"An InP/InGaAs p-i-n/HBT Monolithic Transimpedance Photoreceiver," IEEE Photonics Technology Letters, vol. 2, No. 7, Jul., 1990, by Chandrasekhar et al.
"Monolithic pin-HEMT Receiver With Internal Equaliser for Long-Wavelength Fibre Optic Communications," Electronic Letters, vol. 26, No. 5, Mar. 1, 1990, by H. Yano et al.
Jackson Jerome
Monin, Jr. Donald L.
Sumitomo Electric Industries Ltd.
LandOfFree
Pin-type light receiving device, manufacture of the pin-type lig does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pin-type light receiving device, manufacture of the pin-type lig, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pin-type light receiving device, manufacture of the pin-type lig will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-474051