Static information storage and retrieval – Floating gate – Multiple values
Patent
1997-12-30
1999-08-24
Nelms, David
Static information storage and retrieval
Floating gate
Multiple values
365233, 365191, G11C 1604
Patent
active
059432594
ABSTRACT:
A device for sensing a data in a multibit memory cell includes a reference voltage generating part for generating a plurality of reference voltages, a switching part for successively applying the plurality of reference voltages from the reference voltage generating part to a control gate on the multibit memory cell, a sensing part for comparing the data recorded in the multibit memory cell to the reference voltages when each of the plurality of reference voltages is applied thereto, a controlling part for generating a plurality of reference voltage selection signals to control the switching part, and applying a highest reference voltage to the clock signal controlling part so that the data is produced in response to a clock signal from the clock signal controlling part, and a clock signal controlling part for subjecting a signal from the sensing part and a highest reference voltage selecting signal to a logical operation in controlling an external main clock signal, and a latching part for latching the data from the controlling part.
REFERENCES:
patent: 4331968 (1982-05-01), Gosney, Jr. et al.
patent: 5043940 (1991-08-01), Harari
patent: 5047362 (1991-09-01), Bergemont
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5257220 (1993-10-01), Shin et al.
patent: 5268318 (1993-12-01), Harari
patent: 5394362 (1995-02-01), Banks
patent: 5422842 (1995-06-01), Cernea et al.
patent: 5508958 (1996-04-01), Fazio et al.
patent: 5687114 (1997-11-01), Khan
patent: 5828616 (1998-10-01), Bauer et al.
Raul Cernea, et al., TA 7.4: A 34Mb 3.3V Serial Flash EEPROM for Solid-State Disk Applications, 1995 IEEE International Solid-State Circuits Conference, Feb. 1995, pp. 126-127, and 350 M. Baurer, et al., TA 7.7: A Multilevel-Cell 32Mb Flash Memory, 1995 IEEE International Solid-State CIrcuits Conference, Feb. 1995, pp. 132-133, and 351.
Le Thong
LG Semicon Co. Ltd.
Nelms David
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