GaAs heterostructure having a GaAs.sub.y P.sub.1-y stress-compen

Details GaAs heterostructure having a GaAs.sub.y P.sub.1-y stress-compen GaAs heterostructure having a GaAs.sub.y P.sub.1-y stress-compen

1990-12-03

1991-12-24

Jackson, Jr., Jerome

357 4, 357 16, H01L 29205, H01L 2980

Patent

active

050757440

ABSTRACT:
A GaAs heterostructure is formed with a GaAs.sub.y P.sub.1-y stress-compensating layer. The heterostructure is comprised of a GaAs substrate and GaAs.sub.y P.sub.1-y stress-compensating layer formed on the GaAs substrate. The stress-compensating layer has a lattice constant less than the lattice constant of the GaAs substrate. A channel layer formed on the stress-compensating layer, has a lattice constant greater than the lattice constant of the GaAs substrate. Thus, a pseudomorphic heterostructure may be formed, with the optimum thickness and doping in the channel layer to provide for improved electrical characteristics.

REFERENCES:
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4558336 (1985-12-01), Chang et al.
patent: 5016065 (1991-05-01), Seki et al.
Chin et al., J. Vac Sci. Tech., B8 (2) Mar./Apr. 90, pp. 364-366, "Achievement . . . Structure".
Smith et al., IEEE Electron Device Letters, vol. 10, No. 10, Oct. 89, "A 0.25 .mu.m Gate-Length . . . 94 GHz", pp. 437-439.

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