Method for the fabrication of capacitor in semiconductor device

Details Method for the fabrication of capacitor in semiconductor device Method for the fabrication of capacitor in semiconductor device

1994-05-23

1995-09-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, H01L 218242

Patent

active

054478812

ABSTRACT:
There is disclosed a method for the fabrication of capacitor, comprising the steps of: planing an insulating film formed over a transistor and contacting a polysilicon film for charge storage electrode with an active region of the transistor; forming a photosensitive film pattern with a predetermined size over the polysilicon film and forming a spacer insulating film at each of the side walls of the photosensitive film pattern; subjecting the polysilicon film to etch, so as to thin it partly, in the state of using the photosensitive film pattern and the spacer insulating films as an etch mask; removing the photosensitive film pattern and forming a polysilicon film for spacer with a certain thickness over the resulting structure; etching the polysilicon film for spacer, to form a spacer polysilicon film at each of the side walls of the spacer insulating film; subjecting the polysilicon film for charge storage electrode to etch in the state of using the spacer insulating film and the spacer polysilicon film to the degree that the insulating film is exposed but the polysilicon film for charge storage electrode between the spacer polysilicon films is still left; removing the spacer insulating film; and depositing a dielectric film on the polysilicon film for charge storage electrode and spacer polysilicon films exposed and forming a plate electrode.

REFERENCES:
patent: 5023203 (1991-06-01), Choi
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5102820 (1992-04-01), Chiba
patent: 5192702 (1993-03-01), Tseng
patent: 5266512 (1993-11-01), Kirsch
patent: 5296410 (1994-03-01), Yang
patent: 5330614 (1994-07-01), Ahn
patent: 5380673 (1995-01-01), Yang et al.
patent: 5393688 (1995-02-01), Motonami et al.

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