Fishing – trapping – and vermin destroying
Patent
1994-03-16
1995-09-05
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 90, 437133, 437110, 257 25, 148DIG160, H01L 2120
Patent
active
054478731
ABSTRACT:
A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.
REFERENCES:
patent: 4575924 (1986-03-01), Reed et al.
patent: 4758870 (1988-07-01), Hase et al.
patent: 4799091 (1989-01-01), Reed
patent: 4983540 (1991-01-01), Yamguchi et al.
patent: 5346851 (1994-09-01), Randall et al.
Seabaugh, et al. "Quantum Well Resonant Tunnel Transistors" Aug. 7 1989.
Seabaugh, et al. "Pseudomorphic Bipolar Oct. 10, 1989 Quantum Resonant Tunneling Transistor".
Broekart, et al. "Pseudomorphic In.sub.053 Ga.sub.0.47 AlAs/In Resonant Tunneling Diodes With Peak-to-Valley Current Ratios of 30 at Room Temperature" Aug. 3, 1988.
Broekaert, et al. "Extremely High Current Density, Low Peak Voltage, Pseudomorphic InGaAs IAIAS/InAs Resonant Tunneling Diodes", IEEE 1989, IEDM 89-559, pp. 21.5-21.5.4.
Broekaert, et al., "AlAs Etch-Stop Layers InGaAlAs/InP Heterostructure Devices & Circuits, 1990 IEEE", IEDM 90-339, pp. 13.5.1-13.
Chou, et al. "Lateral Resonant Tunneling Transistors Employing Field-Induced Quantum Wells & Barriers" IEEE vol. 79, No. 8, Aug. 8, 1991.
Huang, G., et al, "Analysis of n-Channel MOS-Controlled Thyristors," 1991 IEEE, vol. 38, No. 7, pp. 1612-1618 Jul. 7 1991.
Ide, et al. "Sidewall Growth by Atomic Layer Epitaxy" Appl. Phys. Lett. S3(23) Dec. 5, 1988, pp. 2314-2316.
Seabaugh, et al., "Room Temperature Hot Electron Transistors with InAs-Notched Resonant Tunneling Diode Injector" May 1991 Japanese Journal of Appl. Physics.
Yamamoto, et al. "Buried Rectangular GalnAs/InP Corrugations of 70nm Pitch Fabricated by OMVPE", Electronics Letters 21 Jun. 1990 vol. 26.
Gary A. Frazier, "Technology and Applications Roadmap For Nanoelectronics", published in The 1989 Digest of Papers, Government Microcircuit Applications Conference, p. 219.
Frazier Gary A.
Randall John N.
Donaldson Richard L.
Hearn Brian E.
Hoel Carlton H.
Radomsky Leon
Texas Instruments Incorporated
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