Solid state imaging device with improved ground adhesion layer

Details Solid state imaging device with improved ground adhesion layer Solid state imaging device with improved ground adhesion layer

1998-04-07

2000-10-17

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257249, 257435, H01L 27148, H01L 29768

Patent

active

061335959

ABSTRACT:
The solid state imaging device of the present invention comprises a light-shielding layer 13 provided with an opening in a photodiode portion and formed through a ground adhesion layer made of one of titanium nitride and titanium on the substrate 1.

REFERENCES:
patent: 5523609 (1996-06-01), Fukusho

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