High speed, high voltage schottky semiconductor device

Details High speed, high voltage schottky semiconductor device High speed, high voltage schottky semiconductor device

1991-01-28

1991-12-24

Mintel, William

357 71, 357 53, 357 30, 357 22, H01L 2948

Patent

active

050757407

ABSTRACT:
A schottky diode is disclosed which has a barrier electrode formed on a semiconductor substrate for creating a schottky barrier therebetween. Also formed on the substrate is a first resistive region which surrounds the barrier electrode. The first resistive region is higher in sheet resistance than the barrier electrode and also capable of creating a schottky barrier at its interface with the semiconductor substrate. A second resistive region is formed on the first resistive region via an insulating layer and electrically connected to the barrier electrode. The sheet resistance of the second resistive region is less than that of the first resistive region. The first and second resistive regions function to improve the voltage blocking capability of the diode, particularly at the time of instantaneous transition from forward to reverse bias. There is also disclosed herein a method of most efficiently fabricating schottky semiconductor devices of the foregoing general construction.

REFERENCES:
patent: 4706104 (1987-11-01), Switzer
patent: 4862244 (1989-08-01), Yamagishi
patent: 4899199 (1990-02-01), Gould
patent: 4952984 (1990-08-01), Martens et al.

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