Thin film semiconductor device

Details Thin film semiconductor device Thin film semiconductor device

1990-10-10

1991-12-24

James, Andrew J.

357 34, 357 35, H01L 2712

Patent

active

050757377

ABSTRACT:
A thin film semiconductor device has an n-type collector region formed in a semiconductor thin film on an insulating substrate, a p-type base region formed in the collector region, and an n-type emitter region. The base and emitter regions are formed by successive diffusion steps of p-type impurities and n-type impurities by using the same mask through the same diffusion window in such a manner than the base width is determined by a difference between the lateral diffusion distance of the p-type impurities and the lateral diffusion distance of the n-type impurities from the common diffusion window.

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Solomon et al., "A Polysilicon Base Bipolar Transistor," International Electron Devices Meeting Technical Digest, 1979, pp. 510-513.
Chang et al., "Amorphous Silicon Bipolar Transistor with High Gain (>12) and High Speed (>30 .mu.s)," International Electron Devices Meeting Technical Digest, 5/1985, pp. 432-435.

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