Field effect transistor with reduced delay variation

Details Field effect transistor with reduced delay variation Field effect transistor with reduced delay variation

1996-12-23

1999-08-24

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257192, 257408, H01L 310328, H01L 2900, H01L 2976

Patent

active

059427736

ABSTRACT:
A field effect transistor with a reduced delay variation is provided in a compound semiconductor layer with a channel, a source, and a drain region of a first conduction type. A gate electrode, a source electrode, and a drain electrode are formed respectively on the regions mentioned above. Particularly the gate electrode formed on the channel is provided with a projecting part extended in a direction crossing the direction of opposition of the source and drain region and caused to protrude from the channel region. In the compound semiconductor layer, a well region of a second conduction type opposite to the first conduction type is formed so as to enclose the channel region, the source region, the drain region, and the projecting part of the gate electrode more deeply than in the channel, source, and drain regions. The delay variation is markedly reduced by the fact that the gate electrode including the projecting part is enclosed with the well region of the second conduction type.

REFERENCES:
patent: 5324969 (1994-06-01), Murai et al.
Kimura et al., "Schottky Characteristics of Subhalf-Micron Gate Gaas Metal-Semiconductor Field-Effect Transistor", Japanese Journal of Applied Physics, vol. 32, No. 2A, Part 2, Feb. 1, 1993, pp. L183-L186.
"A -p-Well GaAs MESFET Technology for Mixed-Mode Applications," Canfield et al., IEEE Journal of Solid-State Circuits, vol. 25, No. 6, Dec. 1990, pp. 1544-1549.
"Elimination of Sidegating in N-Channel GaAs MESFET's Using a P-Type Well.sup.1," Canfield et al., GaAs IC Symposium, pp. 237-240.
"Trap Effects in p-Channel GaAs MESFET's," Peng et al., IEEE Transactions on Electron Devices, vol. 39, No. 11, Nov. 1992, pp. 2444-2451.

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