Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1998-12-21

2000-10-17

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

438396, H01L 213205

Patent

active

061331279

ABSTRACT:
A Ti film is formed on a semiconductor substrate having an element formed on the surface thereof by a sputtering method by using an ordinary DC magnetron sputtering unit under the conditions where Ar gas pressure is 1 mTorr and DC power is 4.4 kW. Under these conditions, the Ti film is formed as a continuous film within one second from the start of discharge so that if the Ti film is charged with secondary electrons generated by plasma used in sputtering, local charge-up does not occur. Thereafter, sputtering is continued and a Ti film of about 300 .ANG. in thickness is formed on the entire surface. Hence, secondary plasma electrons are prevented form causing the breakdown of an insulating film of the element.

REFERENCES:
patent: 5250465 (1993-10-01), Iizuak
patent: 5563100 (1996-10-01), Matsubara
patent: 5583075 (1996-12-01), Ohzu et al.
patent: 5599741 (1997-02-01), Matsumoto et al.
patent: 5940693 (1999-08-01), Maekawa

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