Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1997-12-12

1999-08-24

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438756, 438757, H01L 2100

Patent

active

059424508

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of sequentially forming a gate oxide layer, a gate material layer and a cap insulating layer on a semiconductor substrate, selectively etching them to form a gate, sequentially forming a plurality of material layers on the overall surface of the semiconductor substrate including the gate, etching them back to form a gate sidewall spacer out of the plurality of material layers, and selectively removing the plurality of material layers forming the gate sidewall spacer to form gate sidewall spacers having lengths different from each other, the lengths depending on a particular region of the substrate.

REFERENCES:
patent: 4356623 (1982-11-01), Hunter
patent: 4645563 (1987-02-01), Terada
patent: 4689869 (1987-09-01), Jambotkar et al.
patent: 4728621 (1988-03-01), Graf et al.
patent: 5342797 (1994-08-01), Sapp et al.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-466892