1986-01-15
1990-08-14
James, Andrew J.
357 41, 357 30, 357 59, 295691, H01L 2702, H01L 2170
Patent
active
049491520
ABSTRACT:
A semiconductor integrated circuit having a polycrystalline light interrupting layer covering at least one P-N junction. Photo leakage currents produced at the P-N junction by irradiation with light are thus decreased, and malfunctions are prevented.
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Asano Masamichi
Iwahashi Hiroshi
James Andrew J.
Nguyen Viet Q.
Tokyo Shibaura Denki Kabushiki Kaisha
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