Semiconductor integrated circuit

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Details

357 41, 357 30, 357 59, 295691, H01L 2702, H01L 2170

Patent

active

049491520

ABSTRACT:
A semiconductor integrated circuit having a polycrystalline light interrupting layer covering at least one P-N junction. Photo leakage currents produced at the P-N junction by irradiation with light are thus decreased, and malfunctions are prevented.

REFERENCES:
patent: 3639770 (1972-02-01), Zizelmann
patent: 3950738 (1976-04-01), Hayashi et al.
patent: 3952325 (1976-04-01), Beale et al.
patent: 4271424 (1981-06-01), Inayoshi et al.
patent: 4291326 (1981-09-01), Higuchi et al.
patent: 4326214 (1982-04-01), Trueblood
patent: 4536941 (1985-08-01), Kuo et al.

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