Semiconductor integrated circuit having complementary field effe

Details Semiconductor integrated circuit having complementary field effe Semiconductor integrated circuit having complementary field effe

1985-06-26

1987-12-29

James, Andrew J.

357 45, 357 68, 357 71, H01L 2702

Patent

active

047164506

ABSTRACT:
A semiconductor integrated circuit which can be fabricated at high-density and operate at a high speed. The integrated circuit is of the type having p-channel transistors formed on a first region and n-channel transistors formed on a second region adjacent to the first region. Power supply wirings and signal wirings are formed on the first and second regions in the same direction and in parallel.

REFERENCES:
patent: 3599010 (1971-08-01), Crawford
patent: 4288804 (1981-09-01), Kikuchi et al.
patent: 4384345 (1983-05-01), Mikome
patent: 4412240 (1983-10-01), Kikuchi et al.
patent: 4511914 (1985-04-01), Remedi et al.
patent: 4568961 (1986-02-01), Noto

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