Semiconductor element and method and apparatus for fabricating t

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating selected area

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205124, 205219, 438584, 438758, 438778, 136258, 136290, 257 52, 257 53, 257431, 257458, 257632, 257647, 257798, C25D 502

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061325856

ABSTRACT:
The present invention aims to provide a highly reliable semiconductor element with high performance, and a fabrication method for such highly reliable semiconductor with excellent mass producibility. The photovoltaic elements comprise an electric conductor, semiconductor regions and a transparent conductor layer, which are sequentially formed on a substrate. The shunt resistance in the semiconductor element is rendered in the range from 1.times.10.sup.3 .OMEGA.cm.sup.2 to 1.times.10.sup.6 .OMEGA.cm.sup.2 by performing a forming treatment and a short circuit passivation treatment after forming the transparent conductor layer, and then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, or performing a forming treatment, after forming the semiconductor layers, then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, and then forming the transparent conductor layer.

REFERENCES:
patent: 4197141 (1980-04-01), Bozler et al.
patent: 4451970 (1984-06-01), Izu et al.
patent: 4464823 (1984-08-01), Izu et al.
patent: 4729970 (1988-03-01), Nath et al.
patent: 5277786 (1994-01-01), Kawakami
M. Matsumura et al. "Improvement and Amorphous silicon solar cells by electrochemical treatment", J. of Applied Physics, vol. 61, No. 4, Feb. 15, 1987 pp. 648-169.
Patent Abstracts of Japan, vol. 119, Apr. 14, 1987 and JPA-61-265-874, Nov. 25, 1986.

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