Process for fabricating quantum-well devices

Details Process for fabricating quantum-well devices Process for fabricating quantum-well devices

1986-02-18

1988-11-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437110, 437133, 357 16, H01L 29203, H01L 29205, H01L 21205, H01L 21306

Patent

active

047834277

ABSTRACT:
The present invention teaches a process for fabrication of quantum-well devices, in which the quantum-wells are configured as small islands of GaAs in an AlGaAs matrix. Typically these islands are roughly cubic, with dimensions of about 100 Angstroms per side. To fabricate these, an n- on n+ epitaxial GaAs structure is grown, and then is etched to an e-beam defined patterned twice, and AlGaAs is epitaxially regrown each time. This defines the quantum wells of GaAs in the AlGaAs matrix, and output contacts are then easily formed.

REFERENCES:
patent: 3626328 (1971-12-01), Esaki et al.
patent: 4103312 (1978-07-01), Chang et al.
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4411728 (1983-10-01), Sakamoto
patent: 4503447 (1985-03-01), Iafrate et al.
patent: 4528464 (1985-07-01), Chemla et al.
patent: 4575924 (1986-03-01), Reed et al.
patent: 4581621 (1986-04-01), Reed
patent: 4620206 (1986-10-01), Ohta et al.

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