Method of making a semiconductor device involving simultaneous c

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437174, 437247, 437922, 437 51, 148DIG55, 148DIG91, H01L 21265

Patent

active

047834242

ABSTRACT:
A semiconductor device comprising a first conductor having first and second portions which are electrically disconnected from each other, and a second conductor, formed on an insulating film separating it from the first conductor, which is electrically conductive. A radiated energy beam renders the second conductor non-conductive, while simultaneously electrically connecting the first and second portions, rendering the first conductor conductive, as needed.

REFERENCES:
patent: 4090289 (1978-05-01), Dennard et al.
patent: 4138781 (1979-02-01), Niwa
patent: 4178674 (1979-12-01), Liu et al.
patent: 4179310 (1979-12-01), Compton et al.
patent: 4240094 (1980-12-01), Mader
patent: 4268950 (1981-05-01), Chatterjee et al.
patent: 4292729 (1981-10-01), Powell
patent: 4330931 (1982-05-01), Liu
patent: 4339285 (1982-07-01), Pankove
patent: 4351674 (1982-09-01), Yoshida et al.
patent: 4387503 (1983-06-01), Aswell et al.
patent: 4597162 (1986-07-01), Johnson et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making a semiconductor device involving simultaneous c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device involving simultaneous c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device involving simultaneous c will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-463912

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.