Multi-layer circuit structure with thin semiconductor channels

Details Multi-layer circuit structure with thin semiconductor channels Multi-layer circuit structure with thin semiconductor channels

Filed on

1989-05-11

Date issued

1990-11-20

Examiner

Mintel, William

Other Related Categories

357 4, 357 16, 357 71, 357 68, 357 75, H01L 2702

Type

Patent

Status

active

Patent number

049722484

Description

ABSTRACT:
A three-dimensional multiple-circuit layer semiconductor device has multiple circuit layers vertically stacked on a single crystal wafer. Thick single-crystal InSb film serves as conductors and contacts, thin single-crystal InSb film serves as semiconductor channels, and CdTe serves as insulator layers. The good lattice match between the two materials permits epitaxial growth of fifty or more layers.

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patent: 4502202 (1985-03-01), Malhi
patent: 4596604 (1986-06-01), Akiyama et al.

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