Dual-gate deep-depletion technique for carrier-generation-lifeti

Details Dual-gate deep-depletion technique for carrier-generation-lifeti Dual-gate deep-depletion technique for carrier-generation-lifeti

1981-03-06

1984-01-10

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158T, G01R 3126

Patent

active

044255446

ABSTRACT:
A method for investigating the quality of dielectrically isolated thin film emiconductor layers in inversion-mode MOS devices having dual-gate control capabilities which allow two channels to be created in the semiconductor film. With one channel conducting and a drain voltage providing operation in the saturation region, a step voltage is applied to the gate associated with the second channel which has a transient effect on the current in the first channel. This transient may be analyzed to measure the generation lifetime and other parameters in the body of the device.

REFERENCES:
patent: 4090132 (1978-05-01), Alexander

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