Method of forming a high density vertical stud titanium silicide

Details Method of forming a high density vertical stud titanium silicide Method of forming a high density vertical stud titanium silicide

1985-06-12

1987-12-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

29589, 29591, 357 67, 156643, 156653, H01L 2128

Patent

active

047151099

ABSTRACT:
The disclosure relates to the formation of reachup contacts for VLSI integrated circuit interconnects wherein studs are formed of a conducting material which reaches up through subsequently applied insulating films or the like to contact metal patterns. The reachup contacts are fabricated using LPCVD polycrystalline silicon as a refill in etched apertures in an insulating layer with a titanium or other appropriate material over the silicon layer with subsequent reaction of the silicon layer and the titanium layer to form temperature resistant studs of titanium silicide.

REFERENCES:
patent: 3801880 (1974-04-01), Harada et al.
patent: 4392298 (1983-07-01), Barker et al.
patent: 4410622 (1983-10-01), Dalal et al.
patent: 4428796 (1984-01-01), Milgram
patent: 4451169 (1985-09-01), Bartush
patent: 4451971 (1984-06-01), Milgram
patent: 4470874 (1984-09-01), Bartush et al.
patent: 4520041 (1985-05-01), Aoyama et al.
patent: 4532002 (1985-07-01), White
patent: 4541168 (1985-09-01), Galie et al.
patent: 4545852 (1985-10-01), Barton
J. R. Kitcher, "Integral Stud for Multilevel Metal" in IBM Tech. Disc. Bull., vol. 23, No. 4, Sep. 1980, p. 1395.
T. A. Bartush, "Dual Dielectric for Multilevel Metal" in IBM Tech. Disc. Bull., vol. 23, No. 9, Feb. 1981, p. 4140.
J. R. Kitcher, "Reactive Ion Etch Process for Metal Wiring . . . " in IBM Tech. Disc. Bull., vol. 23, No. 4, Sep. 1980, p. 1394.

Affiliated with

Also associated with

Rating

Method of forming a high density vertical stud titanium silicide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a high density vertical stud titanium silicide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a high density vertical stud titanium silicide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-454669