Method of making a light emitting semiconductor having a rear re

Details Method of making a light emitting semiconductor having a rear re Method of making a light emitting semiconductor having a rear re

1990-01-16

1990-11-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG26,DIG.95, 148DIG106, 156610, 437 81, 437 89, 437132, 437962, H01L 2120, H01L 21203

Patent

active

049719289

ABSTRACT:
A light emitting semiconducting structure is formed over a light reflecting surface using epitaxial growth techniques. The light reflecting surface is provided by an appropriate metal layer intermediately disposed between two dielectric layers, this multi-layer structure is disposed intermediate between an underlying substrate and the overlaying light emitting semiconducting components. The light reflecting surface provides enhanced photon reflectance for the light emitting device. The active region of the light emitting device is formed using epitaxial growth techniques.

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