Method for producing compound semiconductor crystals

Details Method for producing compound semiconductor crystals Method for producing compound semiconductor crystals

1978-05-25

1979-12-18

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, H01L 21208

Patent

active

041793170

ABSTRACT:
A method for producing III-V compound semiconductor crystals using a liquid phase epitaxial growth, in which the crystal growth is achieved in a state in which a single crystal of the same composition as a single crystal serving as a substrate for crystal precipitation is present in a melt for the liquid growth.

REFERENCES:
patent: 3533856 (1970-10-01), Panish et al.
patent: 3631836 (1972-01-01), Jarvela et al.
patent: 3759759 (1973-09-01), Solomon
patent: 3891478 (1975-06-01), Ladany et al.
patent: 3997377 (1976-12-01), Izawa et al.
patent: 4088514 (1978-05-01), Hara et al.

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