Fishing – trapping – and vermin destroying
Patent
1989-08-18
1991-03-12
Tarcza, Thomas H.
Fishing, trapping, and vermin destroying
357 61, 357 15, 357 16, 437126, 437176, H01L 2714, H01L 3100
Patent
active
049996940
ABSTRACT:
In this invention, there is disclosed a new photodiode which comprises a semimetal/semiconductor junction. Distortion of the bands associated with this type of junction result in current flow when an electron hole pair is formed by, for example, a photon impinging upon the junction. The photodiode operates in the photovoltaic mode. However, rather than relying on impurity doping to fabricate a p-n junction, the semimetallic nature of HgTe and its large conduction band offsets with Hg.sub.1-x Cd.sub.x Te are used to create a rectifying Schottky like structure.
REFERENCES:
patent: 3723190 (1973-03-01), Kruse et al.
patent: 3761718 (1973-09-01), Kohn et al.
patent: 4123295 (1978-10-01), McCaldin et al.
patent: 4648917 (1987-03-01), Kay et al.
patent: 4655898 (1987-04-01), Kay et al.
patent: 4791467 (1988-12-01), Amingual et al.
patent: 4801990 (1989-01-01), Carpentier et al.
patent: 4841351 (1989-06-01), Royer
Stelzen et al., `HgCdTe as an IR Det. Matrl. `, Trans. on ED, #16-10, 1969.
Kohn et al., `Micron. HgCdTe Photodectors`, Trans. on ED, #16-10, 1969.
Polla et al., `Schottky Barrier Photodiodes . . . `, J. App. Phys., 51(9), 1980.
J. Appl. Phys., 63(9), 15 Apr. 1988, Feldman, R. D. et al., "Very High Mobility HgTe Films Grown on GaAs Substrates by Molecular-Beam Epitaxy".
J. Va. Sci. Technol., A5(5), Sep./Oct. 1987, Boukerche, M. et al., "Mercury Cadmium Telluride N-Isotype Heterojunctions Grown In Situ by Molecular Beam Epitaxy".
J. Vac. Sci. Technol., A6(4), Jul./Aug. 1988, Boukerche, M. et al., "Mercury Cadmium Telluride N-Isotype Heterojunctions Grown In Situ by Molecular Beam Epitaxy".
Austin Richard F.
Feldman Robert D.
Sulhoff James W.
Zyskind John L.
AT&T Bell Laboratories
Sotomayor John B.
Tarcza Thomas H.
Weiss Eli
LandOfFree
Photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodiode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-451724