Transistor

Details Transistor Transistor

1989-12-19

1991-03-12

Hille, Rolf

357 2, 357 4, H01L 2701, H01L 4500, H01L 2712

Patent

active

049996908

ABSTRACT:
A thin film field effect transistor and method for forming the same are disclosed. Conductive moat bodies 16 and 18 are formed on a surface 12 of an insulator substrate 10. A semiconductor channel layer 20 is formed covering the moat bodies 16 and 18 and the surface 12. A gate insulator layer 22 is formed covering the channel layer 20 between the moat bodies 16 and 18. A gate conductor 26 is formed outwardly from the gate insulator layer 22. Moat bodies 16 and 18 provide efficient contact points for a source contact 56 and a drain contact 60. Additionally, moat bodies 16 and 18 provide additional material from which silicide bodies 48 and 52 may be optionally formed.

REFERENCES:
patent: 4554572 (1985-11-01), Chatterjee

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