MOS switching circuit having gate enhanced lateral bipolar trans

Details MOS switching circuit having gate enhanced lateral bipolar trans MOS switching circuit having gate enhanced lateral bipolar trans

1989-12-08

1991-03-12

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 3073031, 307570, 357 43, H03K 1901

Patent

active

049995189

ABSTRACT:
Circuitry for implementing a gate enhanced lateral transistor to provide a circuit having a bipolar current driving capability and an FET channel voltage drop. The circuits provide switching of the lateral transistor by enabling both gate and base connections. The device is merged into an FET providing essentially no voltage drop across the collector-emitter connections permitting the collector to reach a full power supply voltage.

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Blose et al., "Complementary Bi-FET Logic Circuitry", IBM T.D.B., vol. 15, No. 8, Jan. 1973, pp. 2571-2572.
Lin et al., "Complementary MOS-Bipolar Transistor Structure", IEEE T.E.L.D., vol. ED-16, No. 11, Nov. 1969, pp. 945-951.
Cole, "Is Bi CMOS the Next Technology Driver?", Electronics, Feb. 4, 1988, pp. 55-57.
Santo, "BiCMOS Circuitry: The Best of Both Worlds", IEEE Spectrum, Mar. 1989, pp. 50-53.

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