Doping method using an oxide film and a nitride film on the tren

Details Doping method using an oxide film and a nitride film on the tren Doping method using an oxide film and a nitride film on the tren

1989-08-16

1991-03-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 51, 437 60, 437164, 437919, 437233, H01L 2170

Patent

active

049993127

ABSTRACT:
A doping method using an oxide film and a nitride film on a trench wall as a protective film to prevent the impurity from diffusing into the silicon wafer adjacent to the outer wall and to enable the formation of a substantially flat interface between the first and the second trench to provide a smooth step difference between the first trench and the second trench is disclosed. A highly integrated semiconductor device having a trench comprising a first trench having a bottom and with a second trench formed in the bottom of the first trench with an interface between the first trench and the second trench characterized by the interface between the first and the second trench being substantially flat to provide a smooth step difference between the first trench and the second trench is also disclosed.

REFERENCES:
patent: 4569701 (1986-02-01), Oh
patent: 4676847 (1987-06-01), Lin
patent: 4734384 (1988-03-01), Tsuchiya
patent: 4824793 (1989-04-01), Richardson et al.

Affiliated with

Also associated with

Rating

Doping method using an oxide film and a nitride film on the tren does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Doping method using an oxide film and a nitride film on the tren, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping method using an oxide film and a nitride film on the tren will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-448419