MOS-controlled thyristor (MCT)

Details MOS-controlled thyristor (MCT) MOS-controlled thyristor (MCT)

1989-03-02

1990-09-04

Hille, Rolf

357 39, 357 15, H01L 2974

Patent

active

049548697

ABSTRACT:
In an n-channel MCT (MOS-controlled thyristor), the p-doped channel region and the n.sup.+ -doped drain region are replaced by an n-doped combined channel-drain region (13) in the MOSFET structure of the switchable cathode short-circuits.
The resulting MOSFET structure of the depletion type results in latch-up immunity for the component and makes possible a simple optimization of the current level which can be switched off as a maximum.

REFERENCES:
patent: 4359486 (1982-11-01), Patalong et al.
patent: 4758871 (1988-07-01), Herberg
B. J. Baliga, et al., IEEE Int. Electron Dev. Meet. Techn. Dig., pp. 264-267 (1982).
J. P. Russell, et al., IEEE Electron Dev. Lett., vol. EDL-4, pp. 63-65 (1983).
V. A. K. Temple, IEEE Trans. Electron Dev., vol. ED-33, pp. 1609-1618 (1986).
M. Stoisiek, et al., IEEE Int. Electron Dev. Meet. Techn. Dig., pp. 158-161 (1985).
M. Stoisiek, et al., Advances in Solid State Physics, vol. 26, pp. 361-373, F. Vieweg & Sons, Braunschweig/Wiesbaden (1986).
C. Turchetti, et al., IEEE Trans. Electron Dev., vol. ED-32, pp. 773-782 (1985).
S. E. Swirhun, et al., IEEE Trans. Electron Dev., vol. ED-32, pp. 194-202 (1985).
Siemens Forschungs-und Entwicklungsberichte, vol. 14, No. 2, 1985 (Berlin, DE), M. Stoisiek, et al., pp. 45-49.

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