MOS semiconductor device which has high blocking voltage

Details MOS semiconductor device which has high blocking voltage MOS semiconductor device which has high blocking voltage

1989-04-20

1990-09-04

Larkins, William D.

357 234, 357 238, H01L 2940, H01L 2978

Patent

active

049548689

ABSTRACT:
A semiconductor component which comprises a planar structure which has a channel stopper 7 formed at one edge and a field electrode which covers a pn-junction 3 of the planar zones adjoining the edge 4. The blocking voltage can be increased by providing a channel stopper field plate 19 arranged over the channel stopper and an anode field plate 18 arranged over the field electrode and these field plates are spaced a greater distance from the surface 8 of the semiconductor body between the electrodes 18 and 19 and they have over the channel stopper electrode and the gate electrode.

REFERENCES:
patent: 3767981 (1973-10-01), Polata
patent: 3906542 (1975-09-01), Krambeck et al.
patent: 3961358 (1976-06-01), Polinsky
patent: 4499653 (1985-02-01), Kub et al.
patent: 4553125 (1985-11-01), Sugawara
patent: 4614959 (1986-09-01), Nakagawa
patent: 4651182 (1987-03-01), Yamazaki
patent: 4706107 (1987-11-01), Terada et al.
Claessen et al., `An Accurate DC Model for High Voltage Lateral DMOS Transistors Suited for CACD`, IEEE Trans on ED, vol. ED-33, Dec. 86.
Neilson et al, `Tapered Field`, RCA Tech Notes, 5-83.

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