Semiconductor device with silicon oxynitride over refractory met

Details Semiconductor device with silicon oxynitride over refractory met Semiconductor device with silicon oxynitride over refractory met

1988-06-01

1990-09-04

Jackson, Jr., Jerome

357 54, 357 65, 357 233, 357 235, H01L 2978, H01L 2194

Patent

active

049548670

ABSTRACT:
A semiconductor device uses a high melting point metal such as tungsten, molybdenum, etc. at its gate electrode and wirings for higher operation speed. In particular, the top and the side of the gate electrode and wirings are covered by a layer of silicon oxynitride whereby the gate electrode and the wiring are protected from oxidation and deterioration which may be cause by heat treatment in an oxidative atmosphere and ion implantation.

REFERENCES:
patent: 3629088 (1971-12-01), Frank
patent: 4581622 (1986-04-01), Takasaki et al.
patent: 4663645 (1987-05-01), Komori et al.
patent: 4709255 (1987-11-01), Hartgring et al.
patent: 4733482 (1988-03-01), West et al.
patent: 4745086 (1988-05-01), Panillo et al.
IEEE Transactions on Electron Devices, vol. ED-29, No. 4, Apr. 1982, "Fabrication of . . . Sidewall-Spacer Technology", pp. 590-596.

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