Sense amplifier for a semiconductor memory device

Details Sense amplifier for a semiconductor memory device Sense amplifier for a semiconductor memory device

1986-10-27

1988-03-22

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 307451, 365205, 365196, H03K 3356, H03K 1704, H03K 19017, H03K 17687

Patent

active

047331127

ABSTRACT:
A sense amplifier circuit operable at high speed, but having reduced power dissipation. The amplifier has two input lines, each receiving a respective voltage that differs from the other. A differential amplifier is connected between sources of high and low voltage levels and also has a pair of input terminals respectively connected to the first and second input lines. The amplifier also has first and second inverters, each having an input terminal and an output terminal, the input terminal of the first inverter being connected to the first input line and the input terminal of the second inverter being connected to the second input line. A first series combination of at least two transistors is provided between the first input line and the source of low level voltage, one of the two transistors having a control terminal connected to the output terminal of the first inverter. A second series combination of at least two transistors is proided between the second input line and the source of the low level voltage, one of the transistors of the second series combination having a control terminal connected to the output terminal of te second inverter.

REFERENCES:
patent: 3588848 (1971-06-01), Van Beek
patent: 3631528 (1971-12-01), Green
patent: 4558241 (1985-12-01), Suzuki et al.
patent: 4644197 (1987-02-01), Flannagan

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