Method of manufacturing an antifuse utilizing nitrogen implantat

Details Method of manufacturing an antifuse utilizing nitrogen implantat Method of manufacturing an antifuse utilizing nitrogen implantat

1995-06-07

1997-03-11

Niebling, John

Fishing, trapping, and vermin destroying

437 43, 437 60, 437922, 257530, H01L 218247, H01L 21265

Patent

active

056100841

ABSTRACT:
A method of manufacturing a programmable semiconductor element in the form of an anti-fuse, comprising a thin layer of silicon oxide between two electrode regions, such that a connection can be formed between these electrode regions through electric breakdown in the oxide. In the method, a nitrogen implantation is first carried out at the area of the oxide to be formed, so that a thin layer comprising nitrogen is formed at the surface, which has an oxidation-decelerating effect. Then the oxide is provided through thermal oxidation. Owing to the oxidation-decelerating effect of the layer with nitrogen, an extremely thin oxide layer, for example 5 nm thick, may be obtained in a reproducible manner in a sufficiently long oxidation time.

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patent: 4922319 (1990-05-01), Fukushima
patent: 5508220 (1996-04-01), Eltoukhy et al.
patent: 5518936 (1996-05-01), Yamamoto et al.

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