Electrophotographic photoreceptor comprising amorphous silicon a

Details Electrophotographic photoreceptor comprising amorphous silicon a Electrophotographic photoreceptor comprising amorphous silicon a

1987-01-30

1988-03-22

Welsh, J. David

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 65, G03G 508

Patent

active

047328339

ABSTRACT:
A barrier layer of amorphous silicon carbide is formed on aluminum drum, and a photoconductive layer formed of a mixture of para-.mu.c-Si and a-Si is formed on the surface of the barrier layer. An a-Si surface layer is formed on the photoconductive layer. When the electrophotographic photoreceptor is exposed to a light ray, carriers are generated by the ray, which is visible or has a near-infrared wavelength, due to a smaller energy gap of the para-.mu.c-Si in the layer.

REFERENCES:
patent: 4560634 (1985-12-01), Matsuo
J. Shirafuji et al., "Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous Silicon", Japanese Journal of Applied Physics, vol. 23, No. 10, Oct. 1984, pp. 1278-1286.

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