Fishing – trapping – and vermin destroying
Patent
1986-03-21
1988-03-22
Pianalto, Bernard D.
Fishing, trapping, and vermin destroying
156646, 20419223, 20419232, 427 38, 427 451, 427 47, 427294, 427350, 437238, 437245, B05D 512
Patent
active
047327618
ABSTRACT:
An apparatus for forming a thin film to planarize a surface of a semiconductor device having convex and concave regions, comprising a plasma generating chamber into which are an Ar gas and an O.sub.2 gas are supplied so that a plasma is produced; a specimen chamber in which a substrate electrode upon which a specimen substrate is placed and which is in partial communication with the plasma generating chamber and into which an SiH.sub.4 gas as a film material is introduced; and a bias power source for applying a bias voltage to the substrate electrode so that ions sufficiently impinge substantially vertically upon the electrode to perform ion etching. First, an SiO.sub.2 film is deposited on the specimen substrate by using the O.sub.2 and SiH.sub.4 gases. In the next step, Ar plasma and O.sub.2 plasma are produced in the plasma generating chamber and a bias voltage is applied to the substrate electrode. As a result, deposition and etching occur simultaneously, whereby the surface of the device having convex and concave regions is planarized with an SiO.sub.2 film. Submicron interconnections can be planarized with easily setting planarization conditions at a low rf power. The planarization time can be shortened.
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J. Vac. Sci. Technol., 15(3), May/Jun. 1978; 1978 American Vaccum Society, pp. 1105-1112, Ting et al.
Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering, Japan Journal of Applied Physics, vol. 23, No. 8, 8-84, pp. 1534 to 1536, Ono et al.
Machida Katsuyuki
Oikawa Hideo
Nippon Telegraph and Telephone Corporation
Pianalto Bernard D.
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