Patent
1987-05-19
1989-07-11
Clawson, Jr., Joseph E.
357 234, 357 2314, 357 43, 357 86, H01L 2974
Patent
active
048476714
ABSTRACT:
A monolithically integrated semiconductor device preferably comprising a thyristor driven transistor is disclosed. The thyristor provides a base drive sufficient to fully turn-on an inherent bipolar transistor and achieve the maximum benefit of bipolar conduction within the semiconductor device. The thyristor can be turned on and off through insulated gate control by decoupling the emitter region of the thyristor from the cathode electrode of the device.
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Russell, J. P. et al., "The COMFET-A New High Conductance MOS-Gated Device," IEEE Electron Device Letters, vol. EDL-4, No. 3, Mar. 1983, pp. 63-65.
Plummer, J. D. et al., "Insulated-Gate Planar Thyristors: I-Structure and Basic Operation", IEEE Transactions on Electron Devices, vol. ED-27, No. 2, Feb. 1980, pp. 380-386.
Scharf, B. W. et al., "Insulated-Gate Planar Thyristors: II-Quantitative Modeling", IEEE Transactions on Electron Devices, vol. ED-27, No. 3, pp. 381-393.
Baliga Bantval J.
Pattanayak Deva N.
Clawson Jr. Joseph E.
Davis Jr. James C.
General Electric Company
Ochis Robert
Snyder Marvin
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