Method of exposing only the top surface of a mesa

Details Method of exposing only the top surface of a mesa Method of exposing only the top surface of a mesa

1985-09-19

1987-06-30

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576W, 29580, 148DIG50, 156649, 156653, 357 56, 427 94, H01L 21318

Patent

active

046759840

ABSTRACT:
A method of exposing only the top surface of a narrow mesa is disclosed wherein a protective layer may be very precisely formed on a very narrow mesa for subsequent doping of areas adjacent the mesa without doping the mesa itself. A variation of the invention includes forming an opening directly over the narrow mesa so that a contact may be made at only the top surface of the mesa or the upper portion of the mesa may be doped independent of surfaces adjacent the mesa.

REFERENCES:
patent: 4384301 (1983-05-01), Tasch et al.
patent: 4518629 (1985-05-01), Jeuch
patent: 4536249 (1985-08-01), Rhodes
Jombotkar, "Resistors with Submicron Width", I.B.M. Tech. Discl. Bulletin, vol. 24, #12, 5/82.
Ghandi, VLSI Fabrication Principles, Silicon and Gallium Arsenide, John Wiley & Sons, New York, 1983, pp. 392 & 393.
Jambotkar, "High Performance FET Technology" IBM Tech. Discl. bulletin, vol. 23, #11, 4/81, pp. 4950-4953.

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