Method of making a semiconductor including forming graft/extrins

Details Method of making a semiconductor including forming graft/extrins Method of making a semiconductor including forming graft/extrins

1985-06-05

1987-06-30

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148 15, 148187, 156643, 357 34, H01L 21302, H01L 21265

Patent

active

046759832

ABSTRACT:
An impurity-doped region that serves as an intrinsic base region of a bipolar transistor is formed in a very early stage, and an electrode for taking out the base and a graft base region are formed in a late stage. This makes it possible to reliably connect the intrinsic base region and the graft base region together without permitting them to separate away from each other even when the base region has a very small depth.

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patent: 4381953 (1983-05-01), Ho et al.
patent: 4398962 (1983-08-01), Kanazawa
patent: 4415384 (1983-11-01), Hashimoto
patent: 4418469 (1983-12-01), Fujita
patent: 4477965 (1984-10-01), Blossfeld
patent: 4483738 (1984-11-01), Blossfeld
patent: 4545114 (1985-10-01), Ito et al.

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