Method of making self-aligned recessed oxide isolation regions

Details Method of making self-aligned recessed oxide isolation regions Method of making self-aligned recessed oxide isolation regions

1985-10-31

1987-06-30

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29577C, 148 15, 148187, 148DIG106, 357 234, 357 239, 357 51, H01L 21302, H01L 21263

Patent

active

046759824

ABSTRACT:
A simple process is provided for making two self-aligned recessed oxide isolation regions of different thicknesses which includes the steps of defining first and second spaced apart regions on the surface of a semiconductor substrate, forming a protective layer over the first region, forming a first insulating layer of a given thickness within the second region while the first region is protected by the protective layer, removing the protective layer from the first region and forming a second insulating layer thinner than that of the first layer within the first region. Field regions may be ion implanted prior to forming the insulating layers.

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