High speed BI CMOS logic circuit and a semiconductor integrated

Details High speed BI CMOS logic circuit and a semiconductor integrated High speed BI CMOS logic circuit and a semiconductor integrated

1991-11-27

1994-03-22

Hudspeth, David R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307570, 36518901, H03K 1704

Patent

active

052967557

ABSTRACT:
Herein disclosed is a logic circuit which has an input bipolar transistor for receiving an input signal at its base; variable impedance circuit having at least a first P-channel MOSFET connected between a first supply voltage and the collector of the input bipolar transistor; a second N-channel MOSFET connected between the emitter of the input bipolar transistor and a second supply voltage; an output bipolar transistor connected between the first supply voltage and the output terminal of the circuit for receiving the collector potential of the input bipolar transistor at its base; and a third, pull-down MOSFET connected between the output terminal and the second or third supply voltage.

REFERENCES:
patent: 4682202 (1987-07-01), Tanizawa
patent: 4683384 (1987-07-01), Shibata et al.
patent: 4977338 (1990-12-01), Miyaoka et al.
patent: 4999518 (1991-03-01), Dheng et al.
patent: 4999519 (1991-03-01), Kitsukawa et al.
patent: 5003199 (1991-03-01), Chuang et al.
patent: 5006732 (1991-04-01), Nakamura
patent: 5023479 (1991-06-01), Jeffery et al.
patent: 5045726 (1991-09-01), Leung
patent: 5132566 (1992-07-01), Denda

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