Semiconductor device with source and drain depth extenders and a

Details Semiconductor device with source and drain depth extenders and a Semiconductor device with source and drain depth extenders and a

1987-02-24

1988-11-22

Edlow, Martin H.

357 233, 357 42, 357 4, H01L 2978, H01L 2712, H01L 2702

Patent

active

047869550

ABSTRACT:
A semiconductor device having a layer of semiconductor material disposed on an insulating substrate is disclosed. Source and drain depth extenders are provided within the semiconductor material for extending the respective source and drain regions to the insulating substrate. This device is fabricated in a manner which minimizes damage to the gate oxide layer that often occurs when high energy implants are used to form self-aligned source and drain regions.

REFERENCES:
patent: 4385937 (1983-05-01), Ohmura
patent: 4393578 (1983-07-01), Cady et al.
patent: 4507846 (1985-04-01), Ohno
patent: 4574467 (1986-03-01), Halfacre et al.
Appl. Phys. Lett., vol. 41, No. 9, Nov. 1, 1981, "Trapcreation . . . Polycrystalline Silicon", by Smelter, pp. 849-851.

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