Plasma-nitridated self-aligned tungsten system for VLSI intercon

Details Plasma-nitridated self-aligned tungsten system for VLSI intercon Plasma-nitridated self-aligned tungsten system for VLSI intercon

1988-06-30

1989-07-11

Powell, William A.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156653, 156657, 156662, 427124, 4272554, 427252, 437 41, 437200, B05D 306, B05D 512, H01L 2100, H01L 21306

Patent

active

048471119

ABSTRACT:
A process for forming a diffusion barrier on exposed silicon and polysilicon contacts of an integrated circuit including the step of chemically vapor depositing a layer of tungsten in a self-aligned manner on the exposed contact areas. The layer of tungsten is plasma nitridated to form a tungsten nitride layer and to partially form a tungsten silicide layer adjacent the contact areas. The formation of the tungsten silicide layer is completed by thermal annealing.

REFERENCES:
patent: 4676866 (1987-06-01), Tang et al.

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