Semiconductor commutator with grain boundary

Details Semiconductor commutator with grain boundary Semiconductor commutator with grain boundary

1989-10-17

1991-07-23

Mintel, William

357 60, 357 59, H01L 2990

Patent

active

050347829

ABSTRACT:
A semiconductor commutator is provided with first and second semiconductor regions joined at a junction formed therebetween. The first semiconductor region is of the first conductivity type at the second semiconductor region is of the opposite conductivity type. A grain boundary is provided near the junction and within a region, through which a carrier passes, between electrodes respectively provided on the semiconductor regions.

REFERENCES:
patent: 3518503 (1970-06-01), Doo
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 4062038 (1977-12-01), Cuomo et al.
patent: 4178197 (1979-12-01), Marinace
patent: 4259683 (1981-03-01), Adler et al.
patent: 4626883 (1986-12-01), Kash et al.
patent: 4646427 (1987-03-01), Doyle

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