Method of making hall effect semiconductor memory cell

Details Method of making hall effect semiconductor memory cell Method of making hall effect semiconductor memory cell

1991-01-11

1991-12-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 365170, 365171, H01L 2178, H01L 2127

Patent

active

050752472

ABSTRACT:
A non-volatile, static magnetic memory device, whose operation is based on the Hall effect, is disclosed. The device includes a magnetic patch which stores data in the form of a magnetic field, a semiconductor Hall bar and a pair of integrally-formed bipolar transistors used for amplifying and buffering the Hall voltage produced along the Hall bar. Current is forced to flow down the length of the Hall bar causing a Hall voltage to be developed in a direction transverse to the direction of both the magnetic field and the current. The bases of the bipolar transistors are ohmically coupled to the Hall bar to sense the Hall voltage--the polarity of which is representative of the stored information. A system of current carrying conductors is employed for writing data to individual magnetic patches.

REFERENCES:
patent: 3820091 (1974-06-01), Kohara
patent: 3835376 (1974-09-01), Kataoka
patent: 3858232 (1974-12-01), Boyle et al.
patent: 4276616 (1981-06-01), Hennig
patent: 4516144 (1982-09-01), Jaskolski et al.

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