Microwave semiconductor device using compound semiconductor...

Details Microwave semiconductor device using compound semiconductor... Microwave semiconductor device using compound semiconductor...

2009-02-11

2011-12-27

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S280000, C257S281000, C257SE29127, C257SE29311, C257SE29089

Reexamination Certificate

active

08084793

ABSTRACT:
An undoped AlGaN layer13is formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrode15and a source electrode16forming ohmic junction with the undoped AlGaN layer13are formed separately from each other on the undoped AlGaN layer13. A gate electrode17composed of metal Ni and Au laminated in this order is formed between the drain electrodes15and the source electrode16on the undoped AlGaN layer13. The end portion17-2of the gate electrode17is formed on the underlying metal18formed by a metal containing Ti via an insulating film14on a GaN buffer layer12surrounding the undoped AlGaN layer13.

REFERENCES:
patent: 7508014 (2009-03-01), Tanimoto
patent: 10-178189 (1998-06-01), None
patent: 2005-322811 (2005-11-01), None

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