Integrated circuit including different types of gate stacks,...

Details Integrated circuit including different types of gate stacks,... Integrated circuit including different types of gate stacks,...

2007-09-20

2011-12-06

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23010, C361S718000

Reexamination Certificate

active

08072072

ABSTRACT:
The present invention provides a manufacturing method for an integrated circuit and a corresponding integrated circuit. The integrated circuit comprises a plurality of first devices, each first device including a charge storage layer and a control electrode comprising a plurality of layers; and a plurality of second devices coupled to at least one of the plurality of first devices, each second device including a control electrode comprising at least one layer different from said plurality of layers.

REFERENCES:
patent: 2002/0130314 (2002-09-01), Yim et al.
patent: 2004/0046210 (2004-03-01), Kang et al.
patent: 2005/0093047 (2005-05-01), Goda et al.
patent: 2005/0157549 (2005-07-01), Mokhlesi et al.
patent: 2006/0008992 (2006-01-01), Shukuri
patent: 2007/0096202 (2007-05-01), Kang et al.
patent: 2007/0109870 (2007-05-01), Kurata et al.
patent: 2007/0207575 (2007-09-01), Taniguchi et al.

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