Method of making nonvolatile memory cell containing carbon...

Coating processes – Electrical product produced

Reexamination Certificate

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C427S101000, C427S122000, C438S237000, C438S478000

Reexamination Certificate

active

08048474

ABSTRACT:
A method of making a nonvolatile memory cell includes forming a steering element and forming a carbon resistivity switching material storage element by coating a carbon containing colloid.

REFERENCES:
patent: 3404061 (1968-10-01), Shane et al.
patent: 5915167 (1999-06-01), Leedy
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6548313 (2003-04-01), Ravi et al.
patent: 6574130 (2003-06-01), Segal et al.
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 6815704 (2004-11-01), Chen
patent: 7081377 (2006-07-01), Cleeves
patent: 7105108 (2006-09-01), Kaschak et al.
patent: 7113426 (2006-09-01), Rueckes et al.
patent: 7176064 (2007-02-01), Herner
patent: 7345907 (2008-03-01), Scheuerlein
patent: 7492630 (2009-02-01), Scheuerlein et al.
patent: 2005/0012119 (2005-01-01), Herner et al.
patent: 2005/0226067 (2005-10-01), Herner et al.
patent: 2006/0087005 (2006-04-01), Herner
patent: 2006/0108667 (2006-05-01), Lung
patent: 2006/0141679 (2006-06-01), Subramanian et al.
patent: 2006/0250836 (2006-11-01), Herner et al.
patent: 2006/0250837 (2006-11-01), Herner et al.
patent: 2007/0008773 (2007-01-01), Scheuerlein
patent: 2007/0029546 (2007-02-01), Cho et al.
patent: 2008/0237599 (2008-10-01), Herner et al.
patent: 2008/0239790 (2008-10-01), Herner et al.
patent: 2009/0168492 (2009-07-01), Thorp et al.
patent: 2009/0194839 (2009-08-01), Bertin et al.
patent: 1 780 814 (2007-05-01), None
patent: 1 816 680 (2007-08-01), None
patent: 2 043 156 (2009-04-01), None
International Bureau of WIPO. International Preliminary Report on Patentability, Intl. Application PCT/US09/39127. Oct. 21, 2010. 7 pages.
International Bureau of WIPO. International Preliminary Report on Patentability, Intl. Application PCT/US09/39126. Oct. 21, 2010. 7 pages.
International Bureau of WIPO. International Preliminary Report on Patentability, Intl. Application PCT/US09/39120. Oct. 21, 2010. 7 pages.
Notice of Allowance mailed Feb. 17, 2010 received in U.S. Appl. No. 12/153,874.
U.S. PTO Office Action mailed Jan. 12, 2010 received in U.S. Appl. No. 12/153,872.
M. C. Lemme et al., “Mobility in grapheme double gate field effect transistors,” Solid State Electronics, vol. 52, No. 4, Feb. 20, 2008, pp. 514-518.
International Search Report and Written Opinion mailed Aug. 10, 2009 in International Application No. PCT/US2009/039127.
International Search Report and Written Opinion mailed Jul. 30, 2009, received in International Application No. PCT/US2009/039126.
International Search Report and Written Opinion mailed Aug. 11, 2009, received in International Application No. PCT/US2009/039120.
Office Action mailed Oct. 29, 2009, received in U.S. Appl. No. 12/153,874.
U.S. Appl. No. 09/560,626, filed Apr. 28, 2000, Knall.
U.S. Appl. No. 12/007,780, filed Jan. 15, 2008, Herner et al.
U.S. Appl. No. 12/007,781, filed Jan. 15, 2008, Dunton et al.
U.S. Appl. No. 12/153,872, filed May 27, 2008, Chen et al.
U.S. Appl. No. 12/153,873, filed May 27, 2008, Chen et al.
U.S. Appl. No. 12/153,874, filed May 27, 2008, Chen el al.
A. M. Rao et al., In situ-grown carbon nanotube array with excellent field emission characteristics, Applied Physics Letters, (2000), pp. 3813-3815, vol. 76, No. 25.
Tomohiro Nozaki et al., Fabrication of vertically aligned single-walled carbon nanotubes in atmospheric pressure non-thermal plasma CVD, Carbon, (2007), pp. 364-374, vol. 45.
E. Salonen et al., Ion-irradiation-induced defects in bundles of carbon nanotubes, Nuclear Instruments and Methods in Physics Research B, (2002), pp. 603-608, vol. 193.
Jun Li et al., Bottom-up approach for carbon nanotube interconnects, Applied Physics Letters, (2003), pp. 2491-2493, vol. 82, No. 15.
Hua-Chiang Wen et al., Effects of ammonia plasma treatment on the surface characteristics of carbon fibers, Surface & Coatings Technology, (2006), pp. 3166-3169, vol. 200.
M Meyyappan et al., Carbon nanotube growth by PECVD: a review, Plasma Sources Sci. Technol., (2003), pp. 205-216, vol. 12.
Y. Abdi et al., PECVD-grown carbon nanotubes on silicon substrates with a nickel-seeded tip-growth structure, Materials Science and Engineering C, (2006), pp. 1219-1223, vol. 26.
J. B. Cui et al., Carbon nanotube memory devices of high charge storage stability, Applied Physics Letters, (2002), pp. 3260-3262, vol. 81, No. 17.
Young Min Shin et al., Influence of morphology of catalyst thin film on vertically aligned carbon nanotube growth, Journal of Crystal Growth, (2004), pp. 81-89, vol. 271.
P. Smith et al., Polishing TiN for Nanotube Synthesis, Proceedings of the 16th Annual Meeting of the American Society for Precision Engineering, (2001), Crystal City, VA.
Kevin Bullis, TR10: Graphene Transistors A new fomr of carbon being pioneered by Walter de Heer of Georgia Tech could lead to speedy, compact computer processors, Technology Review, (2008), vol. 20242.
William S. Hummers et al., Preparation of Graphitic Oxide, Journal of American Chemical Society, (1958), pp. 1339, vol. 80.
K.S. Novoselov et al., Electric field effect in atomically thin carbon films, Science, (2004), pp. 666-669, vol. 306.
Dan Li et al., Processable aqueous dispersions of grapheme nanosheets, Nature Nanotechnology, (2008), pp. 101-105, vol. 3, Nature Publishing Group.
Nina Kovtyukhova et al., Layer-by-layer assembly of ultrathin composite films from micron-sized graphite oxide sheets and polycations, American Chemical Society (1999), pp. 771-778, vol. 11.

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