Backside illumination image pickup device, method of...

Details Backside illumination image pickup device, method of... Backside illumination image pickup device, method of...

2008-05-23

2011-11-22

Ometz, David (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C257S291000, C438S057000, C438S064000

Reexamination Certificate

active

08063959

ABSTRACT:
An image pickup device including a semiconductor substrate that is irradiated with light from a first surface side thereof, and reading signal charges generated in the semiconductor substrate in accordance with the light from a second surface side thereof, wherein the semiconductor substrate includes: a photoelectric converting layer that includes a plurality of impurity diffusion layers on the second surface side of the semiconductor substrate, and that produces the signal charges by photoelectric conversion; and an embedded member that includes a light blocking material, and that is embedded in an impurity diffusion layer on a surface side of the photoelectric converting layer, the surface side facing the second surface side of the semiconductor substrate.

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ITE Technical Report (Mar. 2006) vol. 30, No. 25, pp. 25-28 “Rimen Shosya CMOS Image Sensor” with English abstract.

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