GaN-based device cascoded with an integrated FET/Schottky...

Details GaN-based device cascoded with an integrated FET/Schottky... GaN-based device cascoded with an integrated FET/Schottky...

2009-11-09

2011-12-27

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S079000, C257S256000, C257SE29001, C257S109000, C323S265000, C323S235000, C363S125000

Reexamination Certificate

active

08084783

ABSTRACT:
A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally OFF) FET device for switching power applications. The main switching device comprises a depletion mode GaN-based HEMT (High Electron Mobility Transistor) FET that does not include an intrinsic body diode. In one or more embodiments, the higher speed switching device comprises a high speed FET semiconductor switch arranged or connected in parallel with a Schottky diode. The high speed FET semiconductor switch may comprise a Si FET, GaN FET or any other type of FET which possesses higher speed switching capabilities and a lower voltage than that of the GaN-based HEMT FET. In some embodiments, the GaN-based HEMT FET and the higher speed switching device (i.e., the FET and Schottky diode) may be monolithically integrated on the same substrate.

REFERENCES:
patent: 6434019 (2002-08-01), Baudelot et al.
patent: 7180762 (2007-02-01), Soldano
patent: 2006/0081897 (2006-04-01), Yoshida
patent: 2006/0175633 (2006-08-01), Kinzer
patent: 2007/0215899 (2007-09-01), Herman
patent: 2008/0180083 (2008-07-01), Briere et al.

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