Membrane structure element and method for manufacturing same

Stock material or miscellaneous articles – Structurally defined web or sheet – Including variation in thickness

Reexamination Certificate

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C428S157000, C428S702000, C257S417000, C073S504140

Reexamination Certificate

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08057882

ABSTRACT:
It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film13on a surface of a silicon substrate2by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film13formed on the substrate1; and a removal step of removing a part of the substrate2in such a manner that a membrane-corresponding part of the silicon oxide film13is supported as a membrane in a hollow state with respect to the substrate2to form a recessed part4.

REFERENCES:
patent: 6265113 (2001-07-01), Yabe et al.
patent: 2005/0170265 (2005-08-01), Moriya
patent: 2005/0274191 (2005-12-01), Hasegawa et al.
patent: 04-286122 (1992-10-01), None
patent: 6-132277 (1992-10-01), None
patent: 7-135157 (1993-09-01), None
patent: 8-264844 (1995-03-01), None
patent: 9-306812 (1996-05-01), None
patent: 11-274067 (1998-04-01), None
patent: 2004-353070 (2003-05-01), None
patent: 2005-308698 (2005-11-01), None
Sheng, Lie-yi, et al., “A Low-Power CMOS Compatible Integrated Gas Sensor Using Maskless Tin Oxide Sputtering”, 1997 International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997, pp. 939-942.
International Search Report for PCT/JP2007/056723 mailed Jun. 12, 2007.
Notification of Reasons for Rejection dispatched Feb. 23, 2011 by the Japanese Patent Office in the corresponding Japanese Application No. 2007-057956 (2 pages) with an English language translation (2 pages).

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