Compositions of doped, co-doped and tri-doped semiconductor...

Details Compositions of doped, co-doped and tri-doped semiconductor... Compositions of doped, co-doped and tri-doped semiconductor...

2007-03-05

2011-12-06

Kopec, Mark (Department: 1761)

Compositions

Electrically conductive or emissive compositions

Metal compound containing

C252S521100, C250S370120

Reexamination Certificate

active

08070987

ABSTRACT:
Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

REFERENCES:
patent: 3549434 (1970-12-01), Aven
patent: 5187116 (1993-02-01), Kitagawa et al.
patent: 6080984 (2000-06-01), Friesenhahn
patent: 6093347 (2000-07-01), Lynch et al.
patent: 2005/0268841 (2005-12-01), Szeles et al.
patent: 2007/0193507 (2007-08-01), Szeles et al.
patent: 2009/0114832 (2009-05-01), Lynn et al.
patent: WO-2005048357 (2005-05-01), None
Choe et al “Optical properties of CdInGa0.96Er0.04S4 single crystal”, Institute of Physics Conference Series (1998), 152 (Ternary and Multinary Compounds), 681-684. (Abstract).
Biernacki, S. et al., “Electronic properties ofAcenters in CdTe: A comparison with experiment”, Phys. Rev. B 48, 11 726-731 (1993).
Brunett, B.A., et al., “Fine-Scale Spatial Response of CdZnTe Radiation Detectors,” IEEE Transactions on Nuclear Science, vol. 46, No. 3, pp. 237-242, Jun. 1999.
Bushuev, A.V., et al., “Possible Application of γ-Ray Spectrometers Based on CdZnTe Detectors,” Atomic Energy, vol. 92, No. 5, pp. 403-407, 2002.
Castaldini, A. et al., “Compensation and deep levels in II-VI compounds”, Materials Science and Engineering B42, 302-305 (1996).
Hage-Ali, M. et al., Growth Methods of CdTe Nuclear Detector Materials, Semiconductors for Room Temperature Nuclear Detector Applications, T.E. Schlesinger and R.B. James, eds., Academic Press, 1995, pp. 219-222.
Krsmanovic, N. et al., “Electrical compensation in CdTe and Cd0.9Zn0.1Te by intrinsic defects”, Phys. Rev. B Rapid Comm. 62, R16 279-282 (2000).
Laks, D.B. et al., “Role of Native Defects in Wide-Band Gap Semiconductors”, Phys. Rev. Lett. 66, 648-651 (1991).
Lynn, K.G. et al., “Improved CdZnTe detectors grown by vertical Bridgman process”, Mat. Res. Soc. Proc. 484, 319-328 (1998).
Mandel, G., “Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory”, Phys. Rev. 134, A1073-1079 (1964).
Mankoff, D.A. et al., “The Effect of Detector Performance on High Countrate PET Imaging with a Tomograph Based on Position-Sensitive Detectors”, IEEE Transactions on Nuclear Science 35, 592-597 (1988).
Neumark, G.F., “Effect of deep levels on semiconductor carrier concentrations in the case of “strong” compensation”, Phys. Rev. B 26, 2250-2252 (1982).
Park, C.H. et al., “First-principles study of DX centers in CdTe, ZnTe and CdxZn1-xTe alloys”, Phys. Rev. B 52, 11 884-890 (1995).
Piotrowski, J., and W. Gawron, “Extension of longwavelength IR photovoltaic detector operation to near room-temperatures,” Infrared Physics & Technology, vol. 36, pp. 1045-1051, 1995.
Prener, J.S. et al., “Self-Activation and Coactivation in Zinc Sulfide Phosphors”, J. Chem. Phys. 25, 361 (1956).
Rudolph, P. et al. “Attempts to growth of undoped CdTe single crystals with high electrical resistivity”, J. Crystal Growth 161, 28-33 (1996).
Rudolph, P. et al., “Basic problems of vertical Bridgman growth of CdTe”, Mater. Sci. Eng. B16, 8-16 (1993).
Szeles, Cs. et al., “Trapping properties of cadmium vacancies in Cd1-xZnxTe”, Phys. Rev. B 55, 6945-6949 (1997).
Twomey, T.R. et al., ORTEC, “High-Count-Rate Spectroscopy with Ge Detectors: Quantitative Evaluation of the Performance of High-Rate Systems”, URL: <http://www.ortec-online.com/detectors/photon/a7—1—2—3.htm>.
X-ray Instrumentation Associates, Product Application Notes, “Use of CsI(Na) in High Count Rate Applications”, URL: <http://www.xia.com/>.
International Search Report and Written Opinion for PCT/US2007/063330, Apr. 17, 2008.
International Search Report and Written Opinion issued Apr. 22, 2009 in International Application No. PCT/US2008/074912, 7 pages.
Office Action issued Dec. 2, 2009 in U.S. Appl. No. 12/202,026, 9 pages.
Office Action issued May 11, 2010 in Canada Application No. 2,644,536, 3 pages.

Affiliated with

Also associated with

Rating

Compositions of doped, co-doped and tri-doped semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compositions of doped, co-doped and tri-doped semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compositions of doped, co-doped and tri-doped semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4306603