Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2007-02-05
2011-11-15
Markoff, Alexander (Department: 1711)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S001000, C134S026000, C134S022180, C438S905000
Reexamination Certificate
active
08057603
ABSTRACT:
A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber11has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber11has an upper electrode plate38that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate38using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate38using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.
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Translation of JP 2002-043286.
Honda Masanobu
Matsui Yutaka
Markoff Alexander
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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