Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-08-26
2011-11-29
Lappas, Jason (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S196000, C365S207000
Reexamination Certificate
active
08068369
ABSTRACT:
A single-ended sense amplifier circuit amplifies a signal of a memory cell and transmitted through a bit line, and comprises first and second MOS transistors. The first MOS transistor supplies a predetermined voltage to the bit line and controls connection between the bit line and a sense node in response to a control voltage, and the second MOS transistor has a gate connected to the sense node and amplifies a signal transmitted from the bit line via the first MOS transistor. The predetermined voltage is supplied to the bit line before read operation and is set to a value such that a required voltage difference at the sense node between high and low level data of the memory cell can be obtained near a changing point between a charge transfer mode and a charge distributing mode within a range of a read voltage of the memory cell.
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patent: 2002/0060924 (2002-05-01), Ito
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Elpida Memory Inc.
Lappas Jason
McGinn IP Law Group PLLC
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